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CSD18531Q5A slps321e ? june 2012 ? revised august 2015 CSD18531Q5A 60 v n-channel nexfet ? power mosfet 1 features product summary 1 ? ultra-low q g and q gd t a = 25 c typical value unit ? low thermal resistance v ds drain-to-source voltage 60 v ? avalanche rated q g gate charge total (10 v) 36 nc q gd gate charge gate-to-drain 5.9 nc ? logic level v gs = 4.5 v 4.4 m ? ? pb free terminal plating r ds(on) drain-to-source on-resistance v gs = 10 v 3.5 m ? ? rohs compliant v gs(th) threshold voltage 1.8 v ? halogen free ? son 5 mm 6 mm plastic package ordering information (1) device qty media package ship 2 applications CSD18531Q5A 2500 13-inch reel son 5 mm tape 6 mm plastic and ? dc-dc conversion CSD18531Q5At 250 7-inch reel package reel ? secondary side synchronous rectifier (1) for all available packages, see the orderable addendum at ? battery motor control the end of the data sheet. absolute maximum ratings 3 description t a = 25 c value unit this 60-v, 3.5-m , 5 mm 6 mm nexfet ? power v ds drain-to-source voltage 60 v mosfet is designed to minimize losses in power conversion applications. v gs gate-to-source voltage 20 v continuous drain current (package limited) 100 top view continuous drain current (silicon limited), t c i d 134 a = 25 c continuous drain current (1) 19 i dm pulsed drain current (2) 370 a power dissipation (1) 3.1 p d w power dissipation, t c = 25 c 156 t j operating junction ? 55 to 150 c t stg storage temperature ? 55 to 150 c avalanche energy, single pulse e as 224 mj i d = 67 a, l = 0.1 mh, r g = 25 ? (1) typical r ja = 40 c/w on a 1 inch 2 , 2 oz. cu pad on a 0.06 inch thick fr4 pcb. (2) max r jc = 1 c/w, pulse duration 100 s, duty cycle 1% r ds(on) vs v gs gate charge 1 an important notice at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. production data. v gs - gate-to-source voltage (v) r ds(on) - on-state resistance (m : ) 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 d007 t c = 25 c, i d = 22 a t c = 125 c, i d = 22 a q g - gate charge (nc) v gs - gate-to-source voltage (v) 0 5 10 15 20 25 30 35 0 2 4 6 8 10 d004 i d = 22 a v ds = 30 v 1 d 2 d 3 d 4 d d 5 g 6 s 7 s 8 s p0093-01 productfolder sample &buy technical documents support &community tools & software referencedesign
CSD18531Q5A slps321e ? june 2012 ? revised august 2015 www.ti.com table of contents 6.1 community resources .............................................. 7 1 features .................................................................. 1 6.2 trademarks ............................................................... 7 2 applications ........................................................... 1 6.3 electrostatic discharge caution ................................ 7 3 description ............................................................. 1 6.4 glossary .................................................................... 7 4 revision history ..................................................... 2 7 mechanical packaging, and orderable 5 specifications ......................................................... 3 information ............................................................. 8 5.1 electrical characteristics ........................................... 3 7.1 q5a package dimensions ........................................ 8 5.2 thermal information .................................................. 3 7.2 recommended stencil opening ............................... 9 5.3 typical mosfet characteristics .............................. 4 7.3 q5a tape and reel information ............................. 10 6 device and documentation support .................... 7 4 revision history note: page numbers for previous revisions may differ from page numbers in the current version. changes from revision d (may 2015) to revision e page ? corrected device size in description from m to mm. ............................................................................................................. 1 ? corrected package type to son ........................................................................................................................................... 1 changes from revision c (march 2015) to revision d page ? added community resources ............................................................................................................................................... 7 changes from revision b (october 2012) to revision c page ? added part number to title ..................................................................................................................................................... 1 ? changed q g value to 36 nc, measured at 10 v ..................................................................................................................... 1 ? added 7 " reel to ordering information ................................................................................................................................... 1 ? increase max pulsed current to 370 a .................................................................................................................................. 1 ? added line for max power dissipation with the case temperature held to 25 c .................................................................... 1 ? updated pulsed current conditions ........................................................................................................................................ 1 ? updated figure 1 to show z jc curves ................................................................................................................................... 4 ? updated figure 10 ................................................................................................................................................................. 6 ? updated figure 12 ................................................................................................................................................................. 6 changes from revision a (june 2012) to revision b page ? changed the transconductance typ value from: 177 s to: 128 s. .................................................................................... 3 ? changed the turn on and turn off delay time, rise and fall time test conditions from: i ds = 22 a, r g = 2 ? to: i ds = 22 a, r g = 0 ? ............................................................................................................................................................... 3 ? changed the q rr reverse recovery charge typ value from: 68 nc to: 100 nc ................................................................ 3 changes from original (june 2012) to revision a page ? added t a = 25 c to the product summary table ................................................................................................................... 1 2 submit documentation feedback copyright ? 2012 ? 2015, texas instruments incorporated product folder links: CSD18531Q5A
CSD18531Q5A www.ti.com slps321e ? june 2012 ? revised august 2015 5 specifications 5.1 electrical characteristics (t a = 25 c unless otherwise stated) parameter test conditions min typ max unit static characteristics bv dss drain-to-source voltage v gs = 0 v, i d = 250 a 60 v i dss drain-to-source leakage current v gs = 0 v, v ds = 48 v 1 a i gss gate-to-source leakage current v ds = 0 v, v gs = 20 v 100 na v gs(th) gate-to-source threshold voltage v ds = v gs , i d = 250 a 1.5 1.8 2.3 v v gs = 4.5 v, i d = 22 a 4.4 5.8 m ? r ds(on) drain-to-source on-resistance v gs = 10 v, i d = 22 a 3.5 4.6 m ? g fs transconductance v ds = 30 v, i d = 22 a 128 s dynamic characteristics c iss input capacitance 3200 3840 pf c oss output capacitance v gs = 0 v, v ds = 30 v, ? = 1 mhz 380 456 pf c rss reverse transfer capacitance 11 14 pf r g series gate resistance 1.2 2.4 ? q g gate charge total (4.5 v) 18 22 nc q g gate charge total (10 v) 36 43 q gd gate charge gate-to-drain v ds = 30 v, i d = 22 a 5.9 nc q gs gate charge gate-to-source 6.9 nc q g(th) gate charge at v th 5.2 nc q oss output charge v ds = 30 v, v gs = 0 v 32 nc t d(on) turn on delay time 4.4 ns t r rise time 7.8 ns v ds = 30 v, v gs = 10 v, i ds = 22 a, r g = 0 ? t d(off) turn off delay time 20 ns t f fall time 2.7 ns diode characteristics v sd diode forward voltage i sd = 22 a, v gs = 0 v 0.8 1 v q rr reverse recovery charge 100 nc v ds = 30 v, i f = 22 a, di/dt = 300 a/ s t rr reverse recovery time 40 ns 5.2 thermal information (t a = 25 c unless otherwise stated) thermal metric min typ max unit r jc junction-to-case thermal resistance (1) 1.0 c/w r ja junction-to-ambient thermal resistance (1) (2) 50 c/w (1) r jc is determined with the device mounted on a 1 inch 2 (6.45 cm 2 ), 2 oz. (0.071 mm thick) cu pad on a 1.5 inch 1.5 inch (3.81 cm 3.81 cm), 0.06 inch (1.52 mm) thick fr4 pcb. r jc is specified by design, whereas r ja is determined by the user ? s board design. (2) device mounted on fr4 material with 1 inch 2 (6.45 cm 2 ), 2 oz. (0.071 mm thick) cu. copyright ? 2012 ? 2015, texas instruments incorporated submit documentation feedback 3 product folder links: CSD18531Q5A
CSD18531Q5A slps321e ? june 2012 ? revised august 2015 www.ti.com max r ja = 50 c/w max r ja = 125 c/w when mounted on when mounted on a 1 inch 2 (6.45 cm 2 ) of minimum pad area of 2 oz. (0.071 mm thick) 2 oz. (0.071 mm thick) cu. cu. 5.3 typical mosfet characteristics (t a = 25 c unless otherwise stated) figure 1. transient thermal impedance 4 submit documentation feedback copyright ? 2012 ? 2015, texas instruments incorporated product folder links: CSD18531Q5A gate source drain n-chan 5x6 qfn tta max rev3 m0137-01 gate source drain n-chan 5x6 qfn tta min rev3 m0137-02
CSD18531Q5A www.ti.com slps321e ? june 2012 ? revised august 2015 typical mosfet characteristics (continued) (t a = 25 c unless otherwise stated) v ds = 5 v figure 2. saturation characteristics figure 3. transfer characteristics v ds = 30 v i d = 22 a figure 5. capacitance figure 4. gate charge i d = 250 a figure 7. on-state resistance vs gate-to-source voltage figure 6. threshold voltage vs temperature copyright ? 2012 ? 2015, texas instruments incorporated submit documentation feedback 5 product folder links: CSD18531Q5A t c - case temperature ( c) v gs(th) - threshold voltage (v) -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.9 1.2 1.5 1.8 2.1 2.4 d006 q g - gate charge (nc) v gs - gate-to-source voltage (v) 0 5 10 15 20 25 30 35 0 2 4 6 8 10 d004 v ds - drain-to-source voltage (v) c - capacitance (pf) 0 10 20 30 40 50 60 1 10 100 1000 10000 d005 c iss = c gd + c gs c oss = c ds + c gd c rss = c gd v ds - drain-to-source voltage (v) i ds - drain-to-source current (a) 0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 175 200 d002 v gs = 4.5 v v gs = 6.5 v v gs = 10 v v gs - gate-to-source voltage (v) r ds(on) - on-state resistance (m : ) 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 d007 t c = 25 c, i d = 22 a t c = 125 c, i d = 22 a v gs - gate-to-source voltage (v) i ds - drain-to-source current (a) 0 1 2 3 4 5 0 20 40 60 80 100 120 140 d003 t c = 125 c t c = 25 c t c = -55 c
CSD18531Q5A slps321e ? june 2012 ? revised august 2015 www.ti.com typical mosfet characteristics (continued) (t a = 25 c unless otherwise stated) i d = 22 a figure 8. normalized on-state resistance vs temperature figure 9. typical diode forward voltage single pulse r jc = 1.0 c/w figure 10. maximum safe operating area figure 11. single pulse unclamped inductive switching figure 12. maximum drain current vs temperature 6 submit documentation feedback copyright ? 2012 ? 2015, texas instruments incorporated product folder links: CSD18531Q5A t c - case temperature ( c) normalized on-state resistance -75 -50 -25 0 25 50 75 100 125 150 175 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 d008 v gs = 4.5 v v gs = 10 v t c - case temperature ( c) i ds - drain-to-source current (a) -50 -25 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 d012 v ds - drain-to-source voltage (v) i ds - drain-to-source current (a) 0.1 1 10 100 0.1 1 10 100 1000 d010 dc 10 ms 1 ms 100 s 10 s t av - time in avalanche (ms) i av - peak avalanche current (a) 0.01 0.1 1 10 100 d011 t c = 25 q c t c = 125 q c v sd - source-to-drain voltage (v) i sd - source-to-drain current (a) 0 0.2 0.4 0.6 0.8 1 0.0001 0.001 0.01 0.1 1 10 100 d009 t c = 25 c t c = 125 c
CSD18531Q5A www.ti.com slps321e ? june 2012 ? revised august 2015 6 device and documentation support 6.1 community resources the following links connect to ti community resources. linked contents are provided "as is" by the respective contributors. they do not constitute ti specifications and do not necessarily reflect ti's views; see ti's terms of use . ti e2e ? online community ti's engineer-to-engineer (e2e) community. created to foster collaboration among engineers. at e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. design support ti's design support quickly find helpful e2e forums along with design support tools and contact information for technical support. 6.2 trademarks nexfet, e2e are trademarks of texas instruments. all other trademarks are the property of their respective owners. 6.3 electrostatic discharge caution these devices have limited built-in esd protection. the leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the mos gates. 6.4 glossary slyz022 ? ti glossary . this glossary lists and explains terms, acronyms, and definitions. copyright ? 2012 ? 2015, texas instruments incorporated submit documentation feedback 7 product folder links: CSD18531Q5A
CSD18531Q5A slps321e ? june 2012 ? revised august 2015 www.ti.com 7 mechanical packaging, and orderable information the following pages include mechanical, packaging, and orderable information. this information is the most current data available for the designated devices. this data is subject to change without notice and revision of this document. for browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 q5a package dimensions millimeters dim min nom max a 0.90 1.00 1.10 b 0.33 0.41 0.51 c 0.20 0.25 0.34 d1 4.80 4.90 5.00 d2 3.61 3.81 4.02 e 5.90 6.00 6.10 e1 5.70 5.75 5.80 e2 3.38 3.58 3.78 e 1.17 1.27 1.37 h 0.41 0.56 0.71 k 1.10 l 0.51 0.61 0.71 l1 0.06 0.13 0.20 0 12 8 submit documentation feedback copyright ? 2012 ? 2015, texas instruments incorporated product folder links: CSD18531Q5A q a c l1 1 2 3 4 5 6 7 8 e1 e e q d1 top view front view side view m0135-01 l b h 1 2 3 4 5 6 7 8 e2 d2 k bottom view
CSD18531Q5A www.ti.com slps321e ? june 2012 ? revised august 2015 millimeters inches dim recommended pcb pattern min max min max f1 6.205 6.305 0.244 0.248 f2 4.46 4.56 0.176 0.18 f3 4.46 4.56 0.176 0.18 f4 0.65 0.7 0.026 0.028 f5 0.62 0.67 0.024 0.026 f6 0.63 0.68 0.025 0.027 f7 0.7 0.8 0.028 0.031 f8 0.65 0.7 0.026 0.028 f9 0.62 0.67 0.024 0.026 f10 4.9 5 0.193 0.197 f11 4.46 4.56 0.176 0.18 for recommended circuit layout for pcb designs, see application note reducing ringing through pcb layout techniques , slpa005 . 7.2 recommended stencil opening copyright ? 2012 ? 2015, texas instruments incorporated submit documentation feedback 9 product folder links: CSD18531Q5A 4.310 5 8 1 4 3.020 0.500 1.570 1.270 0.615 1.105 0.500 1.585 1.235 0.620 0.500 (0.020) 8x (0.020) (0.020) 8x (0.024) (0.062) 4x (0.050) (0.044) (0.024) (0.119) (0.062) (0.049) (0.170) 0.385 (0.015) f10 f11 f6 f7 f5 f9 f4 f8 1 4 5 8 m0139-01 f2 f3 f1
CSD18531Q5A slps321e ? june 2012 ? revised august 2015 www.ti.com 7.3 q5a tape and reel information notes: 1. 10 sprocket hole-pitch cumulative tolerance 0.2 2. camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm 3. material: black static-dissipative polystyrene 4. all dimensions are in mm (unless otherwise specified) 5. a0 and b0 measured on a plane 0.3 mm above the bottom of the pocket 10 submit documentation feedback copyright ? 2012 ? 2015, texas instruments incorporated product folder links: CSD18531Q5A ? 1.50 +0.10 C0.00 4.00 0.10 (see note 1) 1.75 0.10 r 0.30 typ ? 1.50 min a0 k00.30 0.05 r 0.30 max a0 = 6.50 0.10b0 = 5.30 0.10 k0 = 1.40 0.10 m0138-01 2.00 0.05 8.00 0.10 b0 12.00 0.30 5.50 0.05
package option addendum www.ti.com 24-jul-2015 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish (6) msl peak temp (3) op temp (c) device marking (4/5) samples CSD18531Q5A active vsonp dqj 8 2500 pb-free (rohs exempt) cu sn level-1-260c-unlim -55 to 150 csd18531 CSD18531Q5At active vsonp dqj 8 250 pb-free (rohs exempt) cu sn level-1-260c-unlim csd18531 (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. - the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. (4) there may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) multiple device markings will be inside parentheses. only one device marking contained in parentheses and separated by a "~" will appear on a device. if a line is indented then it is a continuation of the previous line and the two combined represent the entire device marking for that device. (6) lead/ball finish - orderable devices may have multiple material finish options. finish options are separated by a vertical ruled line. lead/ball finish values may wrap to two lines if the finish value exceeds the maximum column width. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release.
package option addendum www.ti.com 24-jul-2015 addendum-page 2 in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.
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